2SC5543 silicon npn epitaxial vhf / uhf wide band amplifier ade-208-690 (z) 1st. edition oct. 1998 features super compact package; (1.4 0.8 0.59mm) capable low voltage operation ; (v ce = 1v) outline mfpak 1. emitter 2. base 3. collector 1 3 2 note: marking is ya- .
2SC5543 2 absolute maximum ratings (ta = 25?) item symbol ratings unit collector to base voltage v cbo 15 v collector to emitter voltage v ceo 8v emitter to base voltage v ebo 1.5 v collector current i c 20 ma collector power dissipation pc 80 mw junction temperature tj 150 c storage temperature tstg ?5 to +150 c electrical characteristics (ta = 25?) item symbol min typ max unit test conditions collector cutoff current i cbo 10 m av cb = 15v , i e = 0 collector cutoff current i ceo 1 mav ce = 8v , r be = emitter cutoff current i ebo 10 m av eb = 1.5v , i c = 0 dc current transfer ratio h fe 85 170 v v ce = 1v , i c = 5ma collector output capacitance cob 0.51 0.9 pf v cb = 1v , i e = 0 f = 1mhz gain bandwidth product f t 5.5 8.5 ghz v ce = 1v , i c = 5ma power gain pg 11 13.7 db v ce = 1v, i c = 5ma f = 900mhz noise figure nf 1.1 2.5 db v ce = 1v, i c = 5ma f = 900mhz
2SC5543 3 160 120 80 40 0 50 100 150 200 10 0.1 1 10 12 5 10 20 50 100 0 2 4 6 8 10 100 200 0 1 20 100 collector power dissipation pc (mw) ambient temperature ta ( c) maximum collector dissipation curve collector to base voltage v (v) cb collector output capacitance cob (pf) collector output capacitance vs. collector to base voltage collector current i (ma) c dc current transfer ratio h fe dc current transfer ratio vs. collector current collector current i (ma) c gain bandwidth product f (ghz) t gain bandwidth product vs. collector current 25 50 v = 1 v ce 0.2 0.4 0.6 0.8 1.0 0 0.2 0.5 2 5 i = 0 f = 1mhz e v = 1 v ce
2SC5543 4 1 5 10 50 100 10 1 10 100 3 5 0 1 20 100 power gain pg (db) power gain vs. collector current s parameter |s | (db) collector current i (ma) c noise figure nf (db) noise figure vs. collector current 25 50 4 8 12 16 20 0 25 20 50 0 4 8 12 16 20 collector current i (ma) c 2 20 v = 1 v ce f = 900mhz 4 2 1 v = 1 v ce f = 900mhz 21 21 2 s parameter vs. collector current 21 v = 1 v ce f = 1ghz collector current i (ma) c
2SC5543 5 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 scale: 4 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 scale: 0.04 / div. 0 30 60 90 120 150 180 ?50 ?0 ?0 ?0 ?20 10 5 4 3 2 1.5 1 .8 ? ? ? ? ?0 .6 .4 .2 0 ?2 ?4 ?6 ?8 ? ?.5 .2 .4 .6 .8 1 2 3 4 5 1.5 10 condition : 100 to 2000 mhz (100 mhz step) c ce v = 1 v , i = 5ma condition : 100 to 2000 mhz (100 mhz step) condition : 100 to 2000 mhz (100 mhz step) condition : 100 to 2000 mhz (100 mhz step) s11 parameter vs. frequency s21 paraameter vs. frequency s12 parameter vs. frequency s22 parameter vs. frequency ce v = 1 v , i = 5ma ce v = 1 v , i = 5ma ce v = 1 v , i = 5ma c c c
2SC5543 6 sparameter (v ce = 1v, i c = 5ma, zo = 50 w ) s11 s21 s12 s22 f (mhz) mag ang mag ang mag ang mag ang 100 0.836 ?0.7 13.66 162.9 0.0249 77.4 0.948 ?4.2 200 0.757 ?1.1 12.22 146.9 0.0472 68.0 0.846 ?6.9 300 0.649 ?8.5 10.57 134.1 0.0637 60.8 0.727 ?6.2 400 0.564 ?3.2 9.14 124.5 0.0750 56.9 0.623 ?2.5 500 0.496 ?5.2 7.90 116.8 0.0840 54.2 0.538 ?6.2 600 0.436 ?7.1 6.91 111.2 0.0916 53.4 0.469 ?8.8 700 0.396 ?06.2 6.12 105.9 0.0985 53.0 0.413 ?0.4 800 0.364 ?14.9 5.49 102.0 0.105 53.2 0.368 ?1.1 900 0.338 ?23.9 4.96 98.3 0.111 53.6 0.327 ?1.1 1000 0.316 ?30.6 4.52 95.3 0.118 54.1 0.297 ?1.2 1100 0.305 ?40.0 4.16 92.3 0.124 54.7 0.270 ?0.7 1200 0.296 ?46.5 3.86 89.8 0.130 55.3 0.246 ?9.7 1300 0.293 ?53.0 3.59 87.5 0.137 56.1 0.229 ?8.7 1400 0.286 ?59.5 3.36 85.4 0.143 56.6 0.209 ?7.9 1500 0.287 ?66.0 3.17 83.2 0.150 57.2 0.195 ?6.3 1600 0.285 ?70.7 3.00 81.4 0.157 57.7 0.180 ?5.0 1700 0.289 ?75.8 2.83 79.8 0.164 58.2 0.167 ?3.8 1800 0.294 178.7 2.71 77.9 0.171 58.8 0.154 ?2.4 1900 0.302 175.4 2.59 75.9 0.178 59.0 0.144 ?0.2 2000 0.308 171.1 2.47 74.5 0.185 59.2 0.133 ?8.6
2SC5543 7 package dimensions 0.9 0.1 1.4 0.05 1.2 0.05 0.8 0.1 3-0.2 +0.1 -0.05 0.2 0.2 0.45 0.45 (0.1) (0.1) 0.6 max hitachi code jedec eiaj mass (reference value) mfpak 0.0016 g 0.15 +0.1 ?.05 as of january, 2001 unit: mm
2SC5543 8 cautions 1. hitachi neither warrants nor grants licenses of any rights of hitachi? or any third party? patent, copyright, trademark, or other intellectual property rights for information contained in this document. hitachi bears no responsibility for problems that may arise with third party? rights, including intellectual property rights, in connection with use of the information contained in this document. 2. products and product specifications may be subject to change without notice. confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. hitachi makes every attempt to ensure that its products are of high quality and reliability. however, contact hitachi? sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. design your application so that the product is used within the ranges guaranteed by hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as fail- safes, so that the equipment incorporating hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the hitachi product. 5. this product is not designed to be radiation resistant. 6. no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from hitachi. 7. contact hitachi? sales office for any questions regarding this document or hitachi semiconductor products. hitachi, ltd. semiconductor & integrated circuits. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 copyright ? hitachi, ltd., 2000. all rights reserved. printed in japan. hitachi asia ltd. hitachi tower 16 collyer quay #20-00, singapore 049318 tel : <65>-538-6533/538-8577 fax : <65>-538-6933/538-3877 url : http://www.hitachi.com.sg url northamerica : http://semiconductor.hitachi.com/ europe : http://www.hitachi-eu.com/hel/ecg asia : http://sicapac.hitachi-asia.com japan : http://www.hitachi.co.jp/sicd/indx.htm hitachi asia ltd. (taipei branch office) 4/f, no. 167, tun hwa north road, hung-kuo building, taipei (105), taiwan tel : <886>-(2)-2718-3666 fax : <886>-(2)-2718-8180 telex : 23222 has-tp url : http://www.hitachi.com.tw hitachi asia (hong kong) ltd. group iii (electronic components) 7/f., north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon, hong kong tel : <852>-(2)-735-9218 fax : <852>-(2)-730-0281 url : http://www.hitachi.com.hk hitachi europe ltd. electronic components group. whitebrook park lower cookham road maidenhead berkshire sl6 8ya, united kingdom tel: <44> (1628) 585000 fax: <44> (1628) 585160 hitachi europe gmbh electronic components group dornacher stra b e 3 d-85622 feldkirchen, munich germany tel: <49> (89) 9 9180-0 fax: <49> (89) 9 29 30 00 hitachi semiconductor (america) inc. 179 east tasman drive, san jose,ca 95134 tel: <1> (408) 433-1990 fax: <1>(408) 433-0223 for further information write to: colophon 2.0
|
